How works a IGZO based LCD-OLED Display?

In the last few weeks there are rumors that Apple want to use IGZO based LCD Displays which will be brighter, clearer, thinner and better efficient than existing LCDs.
With InGaZnO panels the manufacturer can also reach higher resolution like a IPS-LCD Display (Retina). Sharp converted the Kameyama Plant (Gen plant to produce that kind of panels.
Sharp want to start the mass production in end 2011. IGZO TFTs have much lower mobility than p-Si based TFTs formed by ELA (Excimer Laser Annealing), at around 10 cm2/V-sec, mobility is greater than 10X that of a-Si TFTs.This new material, IGZO – Indium, Gallium, Zinc, Oxygen, replaces the traditional amorphous silicon based active layer. IGZO has an electron mobility 40 times greater than traditional materials such that a display’s reaction speed can be more swiftly controlled.
InGaZnO panels are designed for small and middle size panels for smartphones and tablets.

In April 2011 Sharp announced that Sharp with Semiconductor Energy Laboratory Co., Ltd. has developed and will commercialize a thin-film transistor using InGaZnO. High energy performance LCD panels will be made possible by downsizing the transistor and by increasing the light transmittance for each pixel.

Apple want to use IGZO based TFT Displays from Sharp for the next IPhone-5 and Ipad-3. But the analyst thinks also that Sharp and Apple will develop IGZO based OLED Displays in the next 1-2 years.
Large OLED panels with IGZO will be expected in 2014-2015. AUO showcased a 32 inch IGZO based OLED-Tv at FPD-2011

Advantages of IGZO compared to conventional p-Si TFTs include

• Deposited by PVD at low temperatures that might enable use of flexible or low-cost soda lime substrates
• Can be fabricated on conventional a-Si TFT lines at relatively low cost and scaled to large substrates (i.e., Gen 7 or larger)v
• The smooth surface morphology of IGZO enables a clean interface with the gate insulator to provide a higher breakdown field
• Transparency
• Good uniformity and stability
• TFT characteristics are controllable by the metal composition and deposition parameters