OLED-TV Display/Monitor Technology News

Although IGZO TFTs have much lower mobility than p-Si based TFTs formed by ELA (Excimer Laser Annealing), at around 10 cm2/V-sec, mobility is greater than 10X that of a-Si TFTs and more than sufficient to drive OLEDs.

Advantages of IGZO compared to conventional p-Si TFTs include

* Deposited by PVD at low temperatures that might enable use of flexible or low-cost soda lime substrates
* Can be fabricated on conventional a-Si TFT lines at relatively low cost and scaled to large substrates (i.e., Gen 7 or larger)
* The smooth surface morphology of IGZO enables a clean interface with the gate insulator to provide a higher breakdown field
* Transparency
* Good uniformity and stability
* TFT characteristics are controllable by the metal composition and deposition parameters

In other words, oxide semiconductors are potentially a revolutionary technology that would negate the need for Si crystallization and enable large size, high quality, low-cost AMOLED displays.Whether or not this will actually happen is still to be determined. Oxide semiconductor technology for display applications is not a mature technology and repeatability is said to be a significant issue. Currently all AMOLEDs in mass production are fabricated with some version of ELA or solid phase crystallization.
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